sot223 pnp silicon planar medium power transistor issue 3 ? february 1996 j features * for af drivers and output stages * high collector current and low v ce(sat) complementary type ? bcp68 partmarking detail ? bcp69 bcp69 ? 25 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -25 v i c =-10 m a collector-emitter breakdown voltage v (br)ceo -20 v i c =- 30ma emitter-base breakdown voltage v (br)ebo -5 v i e =-10 m a collector cut-off current i cbo -100 -10 na m a v cb =-25v v cb =-25v, t amb =150c emitter cut-off current i ebo -10 m a v eb =-5v collector-emitter saturation voltage v ce(sat) -0.5 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) - 0.6 -1.0 v v i c =-5a, v ce =-10v* i c =-1a, v ce =-1v* static forward current transfer ratio h fe bcp69 bcp69-25 50 63 160 250 400 400 i c =-5ma, v ce =-10v* i c =-500ma, v ce =-1v* i c =-500ma, v ce =-1v* transition frequency f t 100 mhz i c =-100ma, v ce =-5v, f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt549 datasheet. bcp69 c c e b 3 - 20
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